Dopant–dopant interactions in beryllium doped indium gallium arsenide: An ab initio study

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Dopant-Dopant Interactions in Beryllium doped Indium Gallium Arsenide: an Ab Initio Study

We present an ab initio study of dopant-dopant interactions in beryllium-doped InGaAs. We consider defect formation energies of various interstitial and substitutional defects and their combinations. We find that all substitutional-substitutional interactions can be neglected. On the other hand, interactions involving an interstitial defect are significant. Specially, interstitial Be is stabili...

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ژورنال

عنوان ژورنال: Journal of Materials Research

سال: 2018

ISSN: 0884-2914,2044-5326

DOI: 10.1557/jmr.2017.474