Dopant–dopant interactions in beryllium doped indium gallium arsenide: An ab initio study
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چکیده
منابع مشابه
Dopant-Dopant Interactions in Beryllium doped Indium Gallium Arsenide: an Ab Initio Study
We present an ab initio study of dopant-dopant interactions in beryllium-doped InGaAs. We consider defect formation energies of various interstitial and substitutional defects and their combinations. We find that all substitutional-substitutional interactions can be neglected. On the other hand, interactions involving an interstitial defect are significant. Specially, interstitial Be is stabili...
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Centre for Advanced Photonics and Electronics (CAPE), Electrical Engineering Division, University of Cambridge, Cambridge CB3 0FA, UK Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK Department of Electronic and Electrical Engineering, University of Shef...
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The effect of an initial saturation coverage of antimony on the growth of indium arsenide quantum dots on gallium arsenide has been studied during metalorganic vapor-phase epitaxy. After depositing one to two bilayers of InAs at 723 K, the samples were quenched, transferred to ultrahigh vacuum, and characterized by scanning tunneling microscopy and x-ray photoelectron spectroscopy. It has been ...
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ژورنال
عنوان ژورنال: Journal of Materials Research
سال: 2018
ISSN: 0884-2914,2044-5326
DOI: 10.1557/jmr.2017.474